Micro Nano Devices & Systems Lab

Projects > Electro-Thermal Transport in Flexible Electronics

(a) Comparison of random CNT network from simulations (left inset, channel region) with scanning electron microscopy (SEM) image of the CN-TFT used in experiments after the breakdown, respectively. The red dotted line shows the breakdown pattern of the network. (b) Comparison of computational results to experimental measurements of dissipated power vs. source-drain voltage; the dark blue curve shows the statistical average of 50 random networks (dashed curves) obtained from the simulations.

Temperature profile in CNT networks for different values of thermal contact conductances at CNT junction (BiC) and CNT-substrate interface (BiS) at different source to drain voltage (VSD) (a)  3 V, (b)  8 V, (c) 13 V, (d)  27 V. Network density  = 3.5 CNTs/µm2. In each case the current flows from left to right (source to drain) of the panels, respectively. High voltage leads to excessive heat dissipation leading to breakdown of the CNT network.









Relevant Publications:

1. Gupta, M. P., Behnam, A., Lian, F., Estrada, D., Pop, E., and Kumar, S., “High Field Breakdown Characteristics of Carbon Nanotube Thin Film Transistors,” Nanotechnology, 24 (40), 405204 2013. [PDF]

2. Gupta, M. P., Liang, C., Estrada, D., Behnam, A., Pop, E., and Kumar, S., “Impact of Thermal Boundary Conductances on Power Dissipation and Electrical Breakdown of Carbon Nanotube Network Transistors,” Journal of Applied Physics, 112, 124506, 2012. [PDF]

3. Kumar, S., N. Pimparkar, Murthy, J. Y., and Alam, M. A., “Self-consistent Electrothermal Analysis of Nanotube Network Transistors,” Journal of Applied Physics, 109, 014315, 2011. [PDF]

4. Kumar, S., Murthy, J. Y., and Alam, M. A., Percolating Conduction in Finite Nano-tube Networks, Physical Review Letters, 95, 066802, August 2005. [PDF]

Funding: NSF